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| AP9926TGO Pb Free Plating Product Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Surface mount package D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G1 S1 D1 S1 20V 32m 4.7A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 12 4.7 3.8 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 125 Unit /W Data and specifications subject to change without notice 200315051 AP9926TGO Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS BVDSS/Tj RDS(ON) Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 20 0.5 Typ. 0.03 12 9 2 4 8 10 16 7 550 120 94 1.2 Max. Units 32 45 1.2 1 25 100 15 880 1.9 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF o Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA Static Drain-Source On-Resistance 2 VGS=4.5V, ID=4A VGS=2.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=6A VDS=20V, VGS=0V VDS=16V ,VGS=0V VGS=12V ID=6A VDS=16V VGS=4.5V VDS=10V ID=1A RG=3.3,VGS=5V RD=10 VGS=0V VDS=20V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=1.7A, VGS=0V IS=6A, VGS=0V, dI/dt=100A/s Min. - Typ. 15 8 Max. Units 1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in copper pad of FR4 board ; 208/W when mounted on Min. copper pad. 2 AP9926TGO 30 30 TA=25 C 25 o 5.0V 4.5V 3.5V 2.5V ID , Drain Current (A) T A =150 o C 25 5.0V 4.5V 3.5V ID , Drain Current (A) 20 20 15 15 2.5V 10 10 5 5 V G =1.5V 0 0 1 2 3 0 V G =1.5V 0 1 2 3 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 50 1.6 ID=2A T A =25 C 40 o 1.4 ID=4A V G =4.5V Normalized R DS(ON) 0 2 4 6 8 10 RDS(ON) (m ) 1.2 1.0 30 0.8 20 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 6 4 Normalized VGS(th) (V) 1.2 1.2 IS(A) o T j =150 C 2 T j =25 o C 0.8 0 0 0.2 0.4 0.6 0.8 1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9926TGO f=1.0MHz 15 1000 I D =6A VGS , Gate to Source Voltage (V) 12 C iss C (pF) 9 V DS =10V V DS =12V V DS =16V 100 C oss C rss 6 3 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Normalized Thermal Response (Rthja) 100 1 Duty factor=0.5 0.2 10 100us 1ms ID (A) 1 0.1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208oC/W 0.1 T A =25 C Single Pulse o 1s DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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